StrongIRFET™ 2 Power MOSFETs in 30V

Infineon Technologies StrongIRFET™ 2 Power MOSFETs in 30V are optimized for low and high switching frequencies, enabling design flexibility. These devices offer high power efficiency for improved overall system performance while having excellent robustness. Increased current ratings allow for higher current-carrying capability, eliminating the need to parallel multiple devices, translating to lower BOM costs and board savings. Applications include switch-mode power supplies (SMPS), motor drives, battery-powered devices, battery management, uninterruptible power supplies (UPS), light electric vehicles, power tools, gardening tools, adapters, and consumer applications.

Rezultatai: 8
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Qty. RoHS ECAD modelis Technologijos
Montavimo stilius
Pakuotė / Korpusas
Tranzistoriaus poliškumas
Kanalų skaičius
Vds - nutekėjimo-šaltinio pramušimo įtampa
svar. – nuolatinio išleidimo srovė
RDS On - Drain-Source Varža
Vgs - užtūros-šaltinio įtampa
Vgs th - užtūros-šaltinio slenkstinė įtampa
Qg – vartų krūvis
Minimali darbinė temperatūra
Didžiausia darbinė temperatūra
Pd - skaidos galia
Kanalas Mode
Prekinis pavadinimas
Pakavimas
Infineon Technologies MOSFETs StrongIRFET 2 Power -Transistor, 30 V in DPAK
Duomenų Lapas
636Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 122 A 2.05 mOhms - 20 V, 20 V 2.35 V 33 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs StrongIRFET 2 Power -Transistor, 30 V in DPAK
Duomenų Lapas
624Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 125 A 1.8 mOhms - 20 V, 20 V 2.35 V 46 nC - 55 C + 175 C 167 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs StrongIRFET 2 Power -Transistor, 30 V in DPAK
Duomenų Lapas
399Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 119 A 2.35 mOhms - 20 V, 20 V 2.35 V 24 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs Addresses a broad range of applications from low- to high-switching frequency
Duomenų Lapas
3 890Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 137 A 2.35 mOhms - 20 V, 20 V 2.35 V 24 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs Addresses a broad range of applications from low- to high-switching frequency
Duomenų Lapas
1 294Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 143 A 2.05 mOhms - 20 V, 20 V 2.35 V 33 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs Addresses a broad range of applications from low- to high-switching frequency
Duomenų Lapas
3 736Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 99 A 3.05 mOhms - 20 V, 20 V 2.35 V 16 nC - 55 C + 175 C 83 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs Addresses a broad range of applications from low- to high-switching frequency
Duomenų Lapas
3 760Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 73 A 4.05 mOhms - 20 V, 20 V 2.35 V 13 nC - 55 C + 175 C 75 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs Addresses a broad range of applications from low- to high-switching frequency
Duomenų Lapas
2 431Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 71 A 4.7 mOhms - 20 V, 20 V 2.35 V 10 nC - 55 C + 175 C 65 W Enhancement StrongIRFET Reel, Cut Tape