Low Noise Dual N-Channel JFETs

Linear Integrated Systems Low Noise Dual N-Channel JFETs are wideband, high gain, monolithic dual, N-channel JFETs. The low-noise JFETs are improved pin-for-pin replacements for the Fairchild, Motorola, National, and Siliconix-Vishay 2N5911 series. The devices are housed in TO-71 6L, TO-78 7L, PDIP 8L, SOIC 8L, and SOT-23 6L packages and in die form.

Rezultatai: 21
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Configuration Vds - nutekėjimo-šaltinio pramušimo įtampa Vgs - užtūros-šaltinio pramušimo įtampa Užtvaro šaltinio išjungimo įtampa Srovės srovė, kai VGS=0 svar. – nuolatinio išleidimo srovė Pd - skaidos galia Minimali darbinė temperatūra Didžiausia darbinė temperatūra Serija Pakavimas
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET 86Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT SOT-23-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Cut Tape
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET 85Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT SOT-23-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Cut Tape
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET 32Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Cut Tape
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET 100Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Cut Tape
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET 78Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT SOT-23-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Cut Tape
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET 62Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Tube
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 1
Daugkart.: 1

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Tube
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 2 500
Daugkart.: 2 500
Reel: 2 500

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Reel
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 3 000
Daugkart.: 3 000
Reel: 3 000

Si SMD/SMT SOT-23-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Reel
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 500
Daugkart.: 500

Si Through Hole TO-71-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Bulk
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 500
Daugkart.: 500

Si Through Hole TO-78-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Bulk
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 1
Daugkart.: 1

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Tube
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 2 500
Daugkart.: 2 500
Reel: 2 500

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Reel
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 3 000
Daugkart.: 3 000
Reel: 3 000

Si SMD/SMT SOT-23-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Reel
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 500
Daugkart.: 500

Si Through Hole TO-71-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Bulk
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 500
Daugkart.: 500

Si Through Hole TO-78-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Bulk
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 1
Daugkart.: 1

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Cut Tape
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 2 500
Daugkart.: 2 500
Reel: 2 500

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Reel
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 3 000
Daugkart.: 3 000
Reel: 3 000

Si SMD/SMT SOT-23-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Reel
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 500
Daugkart.: 500

Si Through Hole TO-71-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Bulk
Linear Integrated Systems JFETs Wideband, High Gain, Monolithic Dual, N- Channel JFET Ne Sandėlyje Esantys
Min.: 500
Daugkart.: 500

Si Through Hole TO-78-6 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Bulk