Rezultatai: 15
Pasirinkite Vaizdas Dalies Nr.
 Gam.
Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu.
Qty. RoHS ECAD modelis Montavimo stilius
Pakuotė / Korpusas
Tranzistoriaus poliškumas
Kanalų skaičius
Vds - nutekėjimo-šaltinio pramušimo įtampa
svar. – nuolatinio išleidimo srovė
RDS On - Drain-Source Varža
Kanalas Mode
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-263-7 G3F SiC MOSFET 785Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-263-7 G3F SiC MOSFET 1 547Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 135mohm TO-263-7 G3F SiC MOSFET 1 498Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-247-4 G3F SiC MOSFET
Duomenų Lapas
428Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-263-7 G3F SiC MOSFET 124Prieinamumas
800Tikėtina 2026-08-31
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 123 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-247-4 G3F SiC MOSFET 560Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-263-7 G3F SiC MOSFET 1 021Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-247-4 G3F SiC MOSFET 247Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-247-4 G3F SiC MOSFET 456Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-263-7 G3F SiC MOSFET 786Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-247-4 G3F SiC MOSFET 1 592Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 65mohm TO-263-7 G3F SiC MOSFET
Duomenų Lapas
1 560Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 65mohm TO-247-4 G3F SiC MOSFET 473Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 75mohm TO-263-7 G3F SiC MOSFET 572Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 39 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 75mohm TO-247-4 G3F SiC MOSFET 1 695Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 35 A 75 mOhms Enhancement