SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.

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IXYS SiC MOSFET 1200V 80mOhm SiC MOSFET 4 196Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-3

IXYS SiC MOSFET 1200 V 160 mOhm SiC Mosfet 548Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-3
Littelfuse SiC SCHOTTKY diodai RECT 650V 20A SM SCHOTTKY 713Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SiC Schottky Diodes SMD/SMT D2PAK-2 (TO-263-2)
IXYS SiC MOSFET TO247 1.7KV 4.4A N-CH SIC 1 927Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-3

Littelfuse SiC SCHOTTKY diodai RECT 1.2KV 40A SM SCHOTTKY 74Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Screw Mount SOT-227B

Littelfuse SiC SCHOTTKY diodai RECT 1.2KV 120A SM SCHOTTKY
99Tikėtina 2026-08-25
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Screw Mount SOT-227B
Littelfuse SiC SCHOTTKY diodai 650V/8A SiC SBD?TO263-2LAEC-Q101 Ne Sandėlyje Esantys
Min.: 800
Daugkart.: 800

SiC Schottky Diodes SMD/SMT D2PAK-2 (TO-263-2)