SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
YQ20BM10SDFHTL
ROHM Semiconductor
1:
1,79 €
5 000 Tikėtina 2026-07-28
„Mouser“ Dalies Nr.
755-YQ20BM10SDFHTL
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
5 000 Tikėtina 2026-07-28
1
1,79 €
10
1,14 €
100
0,799 €
500
0,651 €
2 500
0,538 €
5 000
Peržiūrėti
1 000
0,593 €
5 000
0,534 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
2 500
Išsami Informacija
Schottky Diodes
SMD/SMT
TO-252-3
Single
Si
20 A
100 V
790 mV
150 A
80 uA
+ 150 C
Reel, Cut Tape
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
YQ10RSM10SDTFTL1
ROHM Semiconductor
1:
1,94 €
6 783 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ10RSM10SDTFTL1
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
6 783 Prieinamumas
1
1,94 €
10
1,25 €
100
0,84 €
500
0,668 €
1 000
Peržiūrėti
4 000
0,556 €
1 000
0,613 €
2 000
0,578 €
4 000
0,556 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
4 000
Išsami Informacija
Schottky Diodes
SMD/SMT
TO-277A-3
Dual Anode Common Cathode
Si
10 A
100 V
610 mV
200 A
80 uA
+ 175 C
Reel, Cut Tape
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ20NL10CDFHTL
ROHM Semiconductor
1:
2,98 €
1 900 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ20NL10CDFHTL
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
1 900 Prieinamumas
1
2,98 €
10
1,94 €
100
1,34 €
500
1,09 €
1 000
0,998 €
2 000
0,989 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
1 000
Išsami Informacija
Schottky Diodes
SMD/SMT
TO-263L-3
Dual Anode Common Cathode
Si
20 A
100 V
650 mV
150 A
70 uA
+ 150 C
Reel, Cut Tape, MouseReel
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ20NL10SEFHTL
ROHM Semiconductor
1:
2,63 €
2 000 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ20NL10SEFHTL
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
2 000 Prieinamumas
1
2,63 €
10
1,69 €
100
1,17 €
500
0,946 €
1 000
0,877 €
2 000
0,855 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
1 000
Išsami Informacija
Schottky Diodes
SMD/SMT
TO-263L-3
Single
Si
20 A
100 V
790 mV
200 A
80 uA
+ 150 C
Reel, Cut Tape
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ30NL10SEFHTL
ROHM Semiconductor
1:
2,90 €
1 244 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ30NL10SEFHTL
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
1 244 Prieinamumas
1
2,90 €
10
1,89 €
100
1,31 €
500
1,06 €
1 000
1,01 €
2 000
0,963 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
1 000
Išsami Informacija
Schottky Diodes
SMD/SMT
TO-263L-3
Single
Si
30 A
100 V
780 mV
200 A
150 uA
+ 150 C
Reel, Cut Tape