Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with superior soft body diode. The Trench6 N-Channel MV MOSFETs from onsemi are available in a wide range of small-footprint packages for design flexibility.

Rezultatai: 450
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onsemi MOSFETs Single N-Channel Power MOSFET 30V, 55A, 5.9mohm 1 450Prieinamumas
Min.: 1
Daugkart.: 1
: 1 500

Si SMD/SMT WDFN-8 N-Channel 1 Channel 30 V 55 A 5.9 mOhms - 20 V, 20 V 1.3 V 18.2 nC - 55 C + 175 C 31 W Enhancement AEC-Q101 Reel, Cut Tape
onsemi MOSFETs PTNG 100V LL SO8FL DUAL 1 040Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 110
: 1 500

Si SMD/SMT DFN-8 N-Channel 2 Channel 100 V 28 A 26 mOhms 20 V 3 V 5.5 nC - 55 C + 175 C 46 W Enhancement Reel, Cut Tape
onsemi MOSFETs NFET U8FL 30V 40A 9.4MOHM 2 220Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 780
: 1 500

Si SMD/SMT WDFN-8 N-Channel 1 Channel 30 V 14 A 9.4 mOhms 20 V 2.1 V 15.2 nC - 55 C + 175 C 26 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V HEFET 5 000Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 500
: 5 000

Si SMD/SMT DFNW-5 N-Channel 1 Channel 40 V 370 A 670 uOhms 20 V 2 V 181 nC - 55 C + 175 C 200 W Enhancement Reel, Cut Tape
onsemi MOSFETs TRENCH 6 60V NFET 2 884Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 100
: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 60 V 150 A 2.4 mOhms 20 V 2 V 52 nC - 55 C + 175 C 46 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6-40V N 0.67 MOHMS LL 1 252Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 80
: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 370 A 670 uOhms 20 V 2 V 181 nC - 55 C + 175 C 200 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6-D3F 40V NFET 1 500Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 150
: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 300 A 9.2 mOhms 20 V 3.5 V 86 nC - 55 C + 175 C 166 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6-40V N 0.7 MOHMS SL 1 500Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 150
: 1 500

Si SMD/SMT DFNW-5 N-Channel 1 Channel 40 V 378 A 700 uOhms 20 V 4 V 128 nC - 55 C + 175 C 200 W Enhancement Reel, Cut Tape
onsemi MOSFETs FET 30V 1.2 MOHM PQFN56MP 2 917Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT PQFN-8 N-Channel 2 Channel 30 V 57 A, 165 A - 20 V, - 12 V, 16 V, 20 V 3 V 7.9 nC, 43 nC - 55 C + 150 C 25 W, 41 W Enhancement PowerTrench Reel, Cut Tape
onsemi MOSFETs T6 40V LL S08FL DS 27 865Prieinamumas
Min.: 1
Daugkart.: 1
: 1 500
Si SMD/SMT SO-8FL-Dual-8 N-Channel 2 Channel 40 V 52 A 6.2 mOhms, 6.2 mOhms - 20 V, 20 V 1.2 V 16 nC - 55 C + 175 C 40 W Enhancement AEC-Q101 Reel, Cut Tape
onsemi NVMFS4C301NET1G
onsemi MOSFETs NFET SO8FL 30V 305A 0.9MO 1 350Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 150
: 1 500

Reel, Cut Tape
onsemi NVMFS4C301NWFET1G
onsemi MOSFETs NFET SO8FL 30V 305A 0.9MO 1 500Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 150
: 1 500

Reel, Cut Tape
onsemi MOSFETs TRENCH 6 60V NFET 1 500Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 150
: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 60 V 150 A 2.4 mOhms 20 V 2 V 52 nC - 55 C + 175 C 46 W Enhancement Reel, Cut Tape
onsemi MOSFETs TRENCH 6 60V NFET 1 360Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 210
: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 60 V 50 A 9.2 mOhms 20 V 2 V 9.5 nC - 55 C + 175 C 46 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V SO8FL 1 321Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 70
: 1 500

Si SMD/SMT DFNW-5 N-Channel 1 Channel 40 V 330 A 820 uOhms 20 V 2 V 143 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V NCH LL IN SO8FL 1 484Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 140
: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 150 A 2 mOhms 20 V 2 V 50 nC - 55 C + 175 C 83 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V NCH LL IN SO8FL 1 432Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 110
: 1 500

Si SMD/SMT DFNW-5 N-Channel 1 Channel 40 V 200 A 1.4 mOhms 20 V 2 V 70 nC - 55 C + 175 C 110 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V S08FL 1 500Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 150
: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 130 A 2.5 mOhms 20 V 2 V 50 nC - 55 C + 175 C 83 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V NCH LL S08FL 1 947Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 180
: 1 500

Si SMD/SMT DFNW-5 N-Channel 1 Channel 40 V 110 A 2.8 mOhms 20 V 2 V 35 nC - 55 C + 175 C 68 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V NCH LL S08FL 1 500Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 150
: 1 500

Si SMD/SMT DFNW-5 N-Channel 1 Channel 40 V 110 A 2.8 mOhms 20 V 2 V 35 nC - 55 C + 175 C 68 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V NCH LL IN U8FL 1 483Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 200
: 1 500

Si SMD/SMT DFNW-5 N-Channel 1 Channel 40 V 87 A 3.7 mOhms 20 V 2 V 18 nC - 55 C + 175 C 55 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V NCH LL IN U8FL 1 470Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 150
: 1 500

Si SMD/SMT DFNW-5 N-Channel 1 Channel 40 V 87 A 3.7 mOhms 20 V 2 V 18 nC - 55 C + 175 C 55 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V NCH LL IN SO8FL 1 055Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 220
: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 78 A 4.5 mOhms 20 V 2 V 23 nC - 55 C + 175 C 46 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 40V NCH LL IN SO8FL 2 726Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 220
: 1 500

Si SMD/SMT DFNW-5 N-Channel 1 Channel 40 V 78 A 4.5 mOhms 20 V 2 V 23 nC - 55 C + 175 C 46 W Enhancement Reel, Cut Tape
onsemi MOSFETs T6 60V S08FL 1 411Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 140
: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 60 V 93 A 4.7 mOhms 20 V 2 V 33.7 nC - 55 C + 175 C 79 W Enhancement Reel, Cut Tape, MouseReel