VS-SCx0BA120 SiC Single Phase Bridge Diodes

Vishay Semiconductors VS-SCx0BA120 Silicon Carbide (SiC) Single Phase Bridge Schottky Diodes are high-performance, 1200V, rugged components for efficient power conversion in various applications. Utilizing SiC technology, these diodes offer superior thermal conductivity and high-voltage capabilities. These wide band gap Schottky diodes deliver high-speed hard switching and efficient operation over a wide temperature range (-40°C to +175°C). Typical applications include AC/DC PFC and DC/DC ultra high-frequency output rectification in FBPS and LLC converters. The Vishay Semiconductors VS-SCx0BA120 Silicon Carbide (SiC) Single Phase Bridge Schottky Diodes are recommended for all applications suffering from Silicon ultrafast recovery behavior.