DE150 RF Power MOSFETs

IXYS DE150 RF Power MOSFETs offer high power density and are fabricated with Littelfuse's advanced low Q_g process. These N-channel, enhancement-mode MOSFETs are available in two variants. The DE150-102N02A features 1000V breakdown voltage, 9.4Ω maximum on-resistance, 2.5V to 4.5V gate threshold voltage, and high-speed switching at frequencies up to 30MHz. The DE150-501N04A offers 500V breakdown voltage, 1.5Ω maximum on-resistance, 2.5V to 4V gate threshold voltage, and high-speed switching at frequencies up to >100MHz. Both types come in a 6-lead flat SMD power package that incorporates an electrically isolated bottom-side pad to enable efficient heat sinking. The package is designed for easy mounting, and no insulators are needed. IXYS DE150 RF Power MOSFETs are lead free, RoHS compliant, and offer a maximum virtual junction temperature of +125°C.