TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

Rezultatai: 10
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ROHM Semiconductor SiC SCHOTTKY diodai RECT 1.2KV 15A RDL SIC SKY 2 719Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-220ACG-2 Single 15 A 1.2 kV 1.6 V 62 A 300 uA + 175 C Tube
ROHM Semiconductor SiC SCHOTTKY diodai RECT 1.2KV 5A RDL SIC SKY 3 968Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-220ACG-2 Single 5 A 1.2 kV 1.6 V 23 A 100 uA + 175 C Tube
ROHM Semiconductor SiC SCHOTTKY diodai SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen 6 417Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-220ACG-2 Single 15 A 650 V 1.55 V 52 A 300 uA + 175 C Tube
ROHM Semiconductor SiC SCHOTTKY diodai SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen 1 701Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-220ACG-2 Single 8 A 650 V 1.55 V 30 A 160 uA + 175 C Tube
ROHM Semiconductor SiC SCHOTTKY diodai RECT 1.2KV 10A RDL SIC SKY 752Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-220ACG-2 Single 10 A 1.2 kV 1.6 V 42 A 200 uA + 175 C Tube
ROHM Semiconductor SiC SCHOTTKY diodai RECT 1.2KV 20A RDL SIC SKY 1 391Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-220ACG-2 Single 20 A 1.2 kV 1.6 V 79 A 400 uA + 175 C Tube
ROHM Semiconductor SiC SCHOTTKY diodai SiC Schottky Barrier Diode, 650V, 10A, 2nd Gen 770Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-220ACG-2 Single 10 A 650 V 1.55 V 38 A 200 uA + 175 C Tube
ROHM Semiconductor SiC SCHOTTKY diodai SiC Schottky Barrier Diode, 650V, 12A, 2nd Gen 830Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-220ACG-2 Single 12 A 650 V 1.55 V 43 A 240 uA + 175 C Tube
ROHM Semiconductor SiC SCHOTTKY diodai SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen 11Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-220ACG-2 Single 20 A 650 V 1.55 V 68 A 400 uA + 175 C Tube
ROHM Semiconductor SiC SCHOTTKY diodai SiC Schottky Barrier Diode, 650V, 6A, 2nd Gen Ne Sandėlyje Esančių Prekių Pristatymo Laikas 21 Savaičių

Through Hole TO-220ACG-2 Single 6 A 650 V 1.55 V 23 A 120 uA + 175 C Tube