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SiC MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
20,28 €
-
735Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
735Prieinamumas
|
|
|
20,28 €
|
|
|
16,31 €
|
|
|
14,29 €
|
|
|
14,04 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
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SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
6,06 €
-
370Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMW120R140M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
370Prieinamumas
|
|
|
6,06 €
|
|
|
4,12 €
|
|
|
3,41 €
|
|
|
3,26 €
|
|
|
3,16 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
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SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
13,62 €
-
1 234Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1 234Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
11,05 €
-
29Prieinamumas
-
240Pagal užsakymą
-
NRND
|
„Mouser“ Dalies Nr.
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
29Prieinamumas
240Pagal užsakymą
|
|
|
11,05 €
|
|
|
6,55 €
|
|
|
5,57 €
|
|
|
4,85 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
5,19 €
-
10 930Tikėtina 2026-07-09
|
„Mouser“ Dalies Nr.
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
10 930Tikėtina 2026-07-09
|
|
|
5,19 €
|
|
|
3,41 €
|
|
|
2,50 €
|
|
|
2,23 €
|
|
|
1,98 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
15,84 €
-
2 160Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2 160Pagal užsakymą
Gamintojo numatytas pristatymo laikas
45 Savaičių
|
|
|
15,84 €
|
|
|
10,47 €
|
|
|
9,05 €
|
|
|
8,80 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
7,96 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 52 Savaičių
-
NRND
|
„Mouser“ Dalies Nr.
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 52 Savaičių
|
|
|
7,96 €
|
|
|
5,24 €
|
|
|
4,06 €
|
|
|
3,89 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Lietuva