STDRIVEG212 220V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG212 220V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 220V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG212 optimized for driving high-speed GaN.

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STMicroelectronics Gate Tvarkyklės High voltage and high-speed half-bridge gate driver for GaN power switches
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STMicroelectronics STDRIVEG212Q
STMicroelectronics STMicroelectronics High voltage and high-speed half-bridge gate driver for GaN power switches
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Min.: 4 900
Daugkart.: 4 900