NSF0x0120 N kanalo SiC MOSFET

Nexperia NSF0x0120 N-Channel SiC MOSFETs offer superior RDS(on) temperature stability in a standard 7-pin TO-263 plastic package for surface-mounting PCB technology. The NSF0x0120 is based on a 1200V power MOSFET with a fast switching speed. These combined features make the Nexperia NSF0x0120 MOSFETs ideal for high-power and high-voltage industrial applications, including E-vehicle charging infrastructure, photovoltaic inverters, and motor drives.

Rezultatai: 19
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode
Nexperia SiC MOSFET NSF060120D7A0-Q/SOT8070/TO263- 477Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38 A 90 mOhms - 10 V, + 22 V 2.9 V 57 nC - 55 C + 175 C 183 W Enhancement
Nexperia SiC MOSFET NSF030120T2A0/SOT8107/X.PAK 785Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT SOT8107-2-7 N-Channel 1 Channel 1.2 kV 68 A 45 mOhms 22 V 2.9 V 113 nC - 55 C + 175 C 294 W Enhancement
Nexperia SiC MOSFET NSF030120D7A0/SOT8070/TO263-7L 599Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 67 A 30 mOhms - 10 V, + 22 V 2.9 V 113 nC - 55 C + 175 C 306 W Enhancement
Nexperia SiC MOSFET NSF030120L4A0/SOT8071/TO247-4L 435Prieinamumas
Min.: 1
Daugkart.: 1

Nexperia SiC MOSFET NSF040120D7A0/SOT8070/TO263-7L 766Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 65 A 40 mOhms - 10 V, + 22 V 2.9 V 95 nC - 55 C + 175 C 306 W Enhancement
Nexperia SiC MOSFET NSF017120T2A0/SOT8107/X.PAK 730Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT SOT8107-2-7 N-Channel 1 Channel 1.2 kV 122 A 26 mOhms - 10 V, + 22 V 2.9 V 190 nC - 55 C + 175 C 517 W Enhancement
Nexperia SiC MOSFET NSF030120D7A0-Q/SOT8070/TO263- 660Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 69 A 45 mOhms - 10 V, + 22 V 2.9 V 113 nC - 55 C + 175 C 306 W Enhancement
Nexperia SiC MOSFET NSF040120D7A1-Q/SOT8070/TO263- 795Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 54 A 60 mOhms - 10 V, + 22 V 2.9 V 81 nC - 55 C + 175 C 250 W Enhancement
Nexperia SiC MOSFET NSF040120D7A1/SOT8070/TO263-7L 795Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 54 A 60 mOhms - 10 V, + 22 V 2.9 V 81 nC - 55 C + 175 C 250 W Enhancement
Nexperia SiC MOSFET NSF040120T2A1/SOT8107/X.PAK 750Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT SOT8107-2-7 N-Channel 1 Channel 1.2 kV 55 A 60 mOhms 22 V 2.9 V 81 nC - 55 C + 175 C 254 W Enhancement
Nexperia SiC MOSFET SOT8107 1200V 36A N-CH 800Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT SOT8107-2-7 N-Channel 1 Channel 1.2 kV 36 A 90 mOhms 22 V 2.9 V 57 nC - 55 C + 175 C 167 W Enhancement
Nexperia SiC MOSFET NSF060120L3A0/SOT429-2/TO247-3 427Prieinamumas
Min.: 1
Daugkart.: 1
: 30

Nexperia SiC MOSFET NSF030120L3A0/SOT429-2/TO247-3 440Prieinamumas
Min.: 1
Daugkart.: 1
: 30

Nexperia SiC MOSFET NSF060120D7A0/SOT8070/TO263-7L 795Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38 A 60 mOhms - 10 V, + 22 V 2.9 V 57 nC - 55 C + 175 C 167 W Enhancement
Nexperia SiC MOSFET NSF060120L4A0/SOT8071/TO247-4L 450Prieinamumas
Min.: 1
Daugkart.: 1
: 30

Nexperia SiC MOSFET NSF080120D7A0/SOT8070/TO263-7L 790Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 33 A 80 mOhms - 10 V, + 22 V 2.9 V 52 nC - 55 C + 175 C 167 W Enhancement
Nexperia SiC MOSFET NSF030120T1A0/SOT8114/QDPAK
150Tikėtina 2026-10-05
Min.: 1
Daugkart.: 1
: 800
SMD/SMT QDPAK-22 N-Channel 1 Channel 1.2 kV 68 A 45 mOhms - 10 V, + 22 V 2.9 V 108 nC - 55 C + 175 C 313 W Enhancement
Nexperia SiC MOSFET NSF040120T1A1/SOT8114/QDPAK
150Tikėtina 2026-10-05
Min.: 1
Daugkart.: 1
: 800
SMD/SMT QDPAK-22 N-Channel 1 Channel 1.2 kV 50 A 26 mOhms - 10 V, + 22 V 2.9 V 78 nC - 55 C + 175 C 217 W Enhancement
Nexperia SiC MOSFET NSF060120T1A0/SOT8114/QDPAK
150Tikėtina 2026-10-05
Min.: 1
Daugkart.: 1
: 800
SMD/SMT QDPAK-22 N-Channel 1 Channel 1.2 kV 33 A 90 mOhms - 10 V, + 22 V 2.9 V 61 nC - 55 C + 175 C 152 W Enhancement