BGSX22G5A10E6327XTSA1

Infineon Technologies
726-BGSX22G5A10E6327
BGSX22G5A10E6327XTSA1

Gam.:

Aprašymas:
RD jungiklių integriniai grandynai ANTENNA DEVICES

ECAD modelis:
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Prieinamumas: 3 190

Turime sandėlyje:
3 190
Galime išsiųsti iš karto
Pagal užsakymą:
9 000
Tikėtina 2026-03-05
Gamintojo numatytas pristatymo laikas
8
Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Pakuotė:
Visa Ritė (Užsakoma po 4500)

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
Nukerpama juosta / „MouseReel™“
1,38 € 1,38 €
0,839 € 8,39 €
0,705 € 17,63 €
0,535 € 53,50 €
0,463 € 115,75 €
0,406 € 203,00 €
0,365 € 365,00 €
Visa Ritė (Užsakoma po 4500)
0,312 € 1 404,00 €
0,271 € 2 439,00 €
† 5,00 € „MouseReel™“ mokestis bus pridėtas ir apskaičiuotas jūsų pirkinių krepšelyje. Visi „MouseReel™“ užsakymai neatšaukiami ir negrąžinami.

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: RD jungiklių integriniai grandynai
RoHS:  
DPDT
100 MHz
6 GHz
1.1 dB
31 dB
- 40 C
+ 85 C
SMD/SMT
ATSLP-10
Si
Reel
Cut Tape
MouseReel
Prekės Ženklas: Infineon Technologies
Jungiklių skaičius: Dual
Darbinė Maitinimo Srovė: 55 uA
Gaminio tipas: RF Switch ICs
Gamyklinės pakuotės kiekis: 4500
Subkategorija: Wireless & RF Integrated Circuits
Maksimali Maitinimo Įtampa: 3.4 V
Maitinimo Įtampa - Min.: 1.65 V
Dalies Nr., kitokios klasifikacijos numeriai: BGSX 22G5A10 E6327 SP001777960
Vieneto Svoris: 2,480 mg
Rasta produktų:
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Pasirinkti atributai: 0

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CNHTS:
8542399000
USHTS:
8542390090
ECCN:
5A991.g

Antenna Centric Devices

Infineon Technologies Antenna Centric Devices significantly improve data rate for mobile cellular devices while minimizing power consumption. Modern 3G/4G smartphones need to cover a wide frequency range, while the multiband antennas need to be minimized in dimensions. Infineon antenna centric devices optimize antenna performance in the required frequency bands to improve reception of weak signals and radiate efficiency. This indirectly lowers current consumption from power amplifiers. Antenna-centric devices are designed to address various tuning concepts, supporting a large variation of antenna impedance with very low RON values and high voltage handling capabilities. Infineon antenna-centric devices are available with both GPIO (General Purpose Input/ Output) and the standardized MIPI RFFE (Mobile Industry Processor Interface for RF Front-End) interface.

Antenna Cross Switches

Infineon Technologies Antenna Cross Switches are engineered for advanced 5G SRS applications, delivering exceptional performance with high linearity of up to 39dBm input power. The switches enable switching between antennas to select the best-performing antenna for optimizing transmit power for an Up-Link (UL) or improved receive sensitivity for a Down-Link (DL). The antenna cross switches boast low current consumption, making the components efficient for energy-sensitive designs while maintaining low insertion loss for optimal signal integrity. With high port-to-port isolation of up to 7.125GHz, the devices effectively minimize interference between channels. The Infineon Technologies antenna cross switches also feature a maximum rapid switching time of just 2µs, ensuring quick response and reliable operation in dynamic communication environments.

BGSX22G5A10 DPDT Antenna Cross Switch

Infineon Technologies BGSX22G5A10 DPDT Antenna Cross Switch is designed for LTE and WCDMA triple antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS, including the inherent higher ESD robustness. The device has a very small size of only 1.1x1.5mm2 and a maximum thickness of 0.55mm.