U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Rezultatai: 86
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Kvalifikacija Prekinis pavadinimas Pakavimas
Toshiba MOSFETs LowON Res MOSFET ID=4A VDSS=20V 49 519Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 20 V 4 A 25 mOhms - 8 V, 8 V 400 mV 3.6 nC - 55 C + 150 C 2 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF 80 679Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT SOT-416-3 N-Channel 1 Channel 20 V 800 mA 235 mOhms - 8 V, 8 V 400 mV 1 nC - 55 C + 150 C 500 mW Enhancement U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small Signal MOSFET V=30V, I-10A 19 096Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT UDFN-6 P-Channel 1 Channel 30 V 10 A 20 mOhms - 25 V, 20 V 1 V 13.6 nC - 55 C + 150 C 2.5 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Ch MOS -30A -60V 68W 3950pF 0.0218 5 662Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 30 A 21.8 mOhms - 20 V, 10 V 3 V 80 nC - 55 C + 175 C 68 W Enhancement AEC-Q100 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK+ PD=180W F=1MHZ 7 096Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 90 A 4.3 mOhms - 20 V, 10 V 1 V 172 nC - 55 C + 175 C 180 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR PS-8 V=-40 PD=2.01W F=1MHZ 17 316Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT PS-8 P-Channel 1 Channel 40 V 8 A 18 mOhms - 20 V, 10 V 2 V 44.6 nC - 55 C + 175 C 2.01 W Enhancement AEC-Q101 U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small-signal MOSFET ID -5.4A, VDSS -12V 4 966Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT UFM-3 P-Channel 1 Channel 12 V 5.4 A 14 mOhms - 6 V, 6 V 1 V 33 nC - 55 C + 150 C 1 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small-signal MOSFET P-Channel 3 366Prieinamumas
6 000Tikėtina 2026-04-10
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT UFM-3 P-Channel 1 Channel 20 V 5.5 A 24.9 mOhms - 8 V, 8 V 1 V 12.8 nC - 55 C + 150 C 1 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small Signal MOSFET P-ch VDSS=-20V, VGSS=+/-8V, ID=-3.0A, RDS(ON)=0.103Ohm @ 4.5V, in UFM package 4 215Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT UFM-3 P-Channel 1 Channel 20 V 3 A 103 mOhms - 8 V, 8 V 1 V 4.6 nC - 55 C + 150 C 500 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-4.4A 2 482Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT UFM-3 P-Channel 1 Channel 20 V 4.4 A 25.8 mOhms - 8 V, 6 V 1 V 24.8 nC + 150 C 1 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-3A 3 255Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT UFM-3 P-Channel 1 Channel 20 V 3 A 103 mOhms - 8 V, 6 V 1 V 4.6 nC + 150 C 1 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P Channel -60V -2A AECQ MOSFET 5 729Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 60 V 2 A 360 mOhms - 20 V, 10 V 2 V 8.3 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs P Channel -20V -2A AECQ MOSFET 5 444Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT S-Mini-3 P-Channel 1 Channel 20 V 2 A 150 mOhms - 8 V, 6 V 1 V 4.6 nC - 55 C + 150 C 1.2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs P Channel -20V -3.9A AECQ MOSFET 77Prieinamumas
12 000Pagal užsakymą
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 20 V 3.9 A 93 mOhms - 8 V, 6 V 1 V 4.6 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small Signal MOSFET P-ch VDSS=-20V, VGSS=+6/-8V, ID=-0.8A, RDS(ON)=0.39Ohm @ 4.5V, in VESM package 8 541Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 8 000

Si SMD/SMT VESM-3 P-Channel 1 Channel 20 V 800 mA 4 Ohms - 8 V, 6 V 1 V 1.6 nC - 55 C + 150 C 150 mW Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Ch U-MOS VI FET ID -2.6A -20V 290pF 785Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 4 000

Si SMD/SMT ES6-6 P-Channel 1 Channel 20 V 2.6 A 250 mOhms - 8 V, 8 V 1 V 4.7 nC - 55 C + 150 C 500 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Ch U-MOS VI FET ID -3.4A -20V 630pF 2 818Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 4 000

Si SMD/SMT ES6-6 P-Channel 1 Channel 20 V 3.4 A 154 mOhms - 8 V, 8 V 1 V 10.4 nC - 55 C + 150 C 500 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs LowON Res MOSFET ID=--4.8A VDSS=-12V 2 844Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 4 000

Si SMD/SMT SOT-563-6 P-Channel 1 Channel 12 V 4.8 A 26 mOhms - 8 V, 8 V 1 V 12.7 nC - 55 C + 150 C 700 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Ch U-MOS VI FET ID -6A -20V 1650pF 3 091Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT UF-6 P-Channel 1 Channel 20 V 6 A 54 mOhms - 8 V, 8 V 1 V 23.1 nC - 55 C + 150 C 1 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Ch U-MOS VI FET ID -12A -12V 1200pF 1 326Prieinamumas
3 000Tikėtina 2026-03-27
Min.: 1
Daugkart.: 1
Reel: 3 000

Si P-Channel 1 Channel U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Ch Small Signal 270pF -2A -20V 4.6nC 2 958Prieinamumas
24 000Pagal užsakymą
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT SOT-346-3 P-Channel 1 Channel 20 V 2 A 311 mOhms - 8 V, 8 V 1 V 4.6 nC - 55 C + 150 C 600 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small-Signal MOSFET 12 180Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 20 V 3.9 A 93 mOhms - 8 V, 8 V 1 V 4.6 nC - 55 C + 150 C 2 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-Ch U-MOSVI FET ID -4A -20VDSS 630pF 16 755Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 4 A 150 mOhms - 8 V, 8 V 1 V 10.4 nC - 55 C + 150 C 1 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs LowON Res MOSFET ID=-2A VDSS=-20V 6 618Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT S-Mini-3 P-Channel 1 Channel 20 V 2 A 90 mOhms - 12 V, 12 V 1.2 V 5.1 nC - 55 C + 150 C 600 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small-signal MOSFET ID -2A, VDSS -30V 2 989Prieinamumas
3 000Tikėtina 2026-02-16
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT SOT-346-3 P-Channel 1 Channel 30 V 2 A 125 mOhms - 20 V, 20 V 2.2 V 3.4 nC - 55 C + 150 C 1.2 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel