D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

Rezultatai: 11
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onsemi SiC SCHOTTKY diodai Silicon Carbide (SiC) Schottky Diode - EliteSiC, 50 A, 1200 V, D3, TO-247-2L 463Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-2 Single 50 A 1.2 kV 1.4 V 231 A 200 uA - 55 C + 175 C NDSH50120C Tube

onsemi SiC SCHOTTKY diodai SIC DIODE GEN20 1200V TO247-2L 593Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-2 Single 26 A 1.2 kV 1.75 V 119 A 2.06 uA - 55 C + 175 C NDSH20120C-F155 Tube
onsemi SiC SCHOTTKY diodai Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40 A, 1200 V, D3, TO-247-3L 1 198Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3LD Dual Anode Common Cathode 52 A 1.2 kV 1.36 V 123 A 2.39 uA - 55 C + 175 C NDSH40120CDN Tube

onsemi SiC SCHOTTKY diodai SIC DIODE GEN20 1200V TO247-2L 1 266Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-2 Single 12 A 1.2 kV 1.75 V 546 A 200 uA - 55 C + 175 C NDSH10120C-F155 Tube
onsemi SiC SCHOTTKY diodai SIC DIODE GEN20 1200V TO247-3L 400Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 Dual Anode Common Cathode 24 A 1.2 kV 1.75 V 59 A 1 uA - 55 C + 175 C NDSH20120CDN Tube
onsemi SiC SCHOTTKY diodai SIC DIODE GEN20 1200V TO247-3L 382Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 Dual Anode Common Cathode 38 A 1.2 kV 1.75 V 91 A 1.5 uA - 55 C + 175 C NDSH30120CDN Tube

onsemi SiC SCHOTTKY diodai SIC DIODE GEN20 1200V TO247-2L 865Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-2 Single 46 A 1.2 kV 1.75 V 195 A 9 uA - 55 C + 175 C NDSH40120C-F155 Tube
onsemi SiC SCHOTTKY diodai Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 1200V, D3, TO-247-2L 450Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-2 Single 20 A 1.2 kV 1.38 V 119 A 200 uA - 55 C + 175 C NVDSH20120C Tube

onsemi SiC SCHOTTKY diodai Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L 174Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-2 Single 20 A 1.2 kV 1.38 V 119 A 200 uA - 55 C + 175 C NDSH20120C Tube

onsemi SiC SCHOTTKY diodai SIC DIODE GEN20 1200V TO247-2L
900Tikėtina 2026-02-17
Min.: 1
Daugkart.: 1

Through Hole TO-247-2 Single 38 A 1.2 kV 1.75 V 161 A 5 uA - 55 C + 175 C NDSH30120C-F155 Tube
onsemi SiC SCHOTTKY diodai Silicon Carbide (SiC) Schottky Diode - EliteSiC, 50A, 1200V, D3, TO-247-2L 900Gamyklos turimos atsargos
Min.: 450
Daugkart.: 450

Through Hole TO-247-2 Single 50 A 1.2 kV 1.4 V 231 A 200 uA - 55 C + 175 C NVDSH50120C Tube