VSLY5850

Vishay Semiconductors
782-VSLY5850
VSLY5850

Gam.:

Aprašymas:
Infrared Emitters 850nm,T-1.75 600mW/sr,+/-3deg.

ECAD modelis:
Atsisiųskite nemokamą Library Loader, kad galėtumėte konvertuoti šį failą darbui su ECAD įrankiu. Sužinokite daugiau apie ECAD Modelį.

Prieinamumas: 9 361

Turime sandėlyje:
9 361 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
4 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
0,946 € 0,95 €
0,726 € 7,26 €
0,627 € 62,70 €
0,571 € 285,50 €
0,539 € 539,00 €
0,522 € 1 044,00 €
0,46 € 1 840,00 €
0,459 € 5 508,00 €

Produkto Požymis Atributo vertė Pasirinkite Požymį
Vishay
Gaminio kategorija: Infrared Emitters
RoHS:  
Through Hole
850 nm
600 mW/sr
3 deg
100 mA
1.65 V
190 mW
- 40 C
+ 85 C
Bulk
Prekės Ženklas: Vishay Semiconductors
Rudens laikas: 10 ns
Apšvietimo spalva: Infrared
Objektyvo Forma: Dome
Gaminio tipas: IR Emitters (IR LEDs)
Kilimo Laikas: 10 ns
Gamyklinės pakuotės kiekis: 4000
Subkategorija: Infrared Data Communications
Prekinis pavadinimas: SurfLight
Vieneto Svoris: 449,665 mg
Rasta produktų:
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Pasirinkti atributai: 0

TARIC:
8541410000
CNHTS:
8541410090
CAHTS:
8541410000
USHTS:
8541410000
JPHTS:
854141000
MXHTS:
8541410100
BRHTS:
85414011
ECCN:
EAR99

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

VSLY850 High Speed IR Emitting Diodes

Vishay Semiconductors VSLY850 High Speed IR Emitting Diodes are infrared, 850nm emitting diodes based on GaAlAs surface emitter chip technology. Vishay Semiconductors VSLY850 High Speed IR Emitting Diodes have extreme high radiant intensity, high optical power, high speed, and are molded in clear, untinted plastic packages. The VSLY3850 comes in a T-1 plastic package, and the VSLY5850 also has a parabolic lens.