QPL9503TR7

Qorvo
772-QPL9503T
QPL9503TR7

Gam.:

Aprašymas:
RF Stiprintuvas 1-6GHz Gain 21.6dB NF .9dB OIP3 35dBm

ECAD modelis:
Atsisiųskite nemokamą Library Loader, kad galėtumėte konvertuoti šį failą darbui su ECAD įrankiu. Sužinokite daugiau apie ECAD Modelį.

Prieinamumas: 3 731

Turime sandėlyje:
3 731 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
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Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Pakuotė:
Visa Ritė (Užsakoma po 2500)

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
Nukerpama juosta / „MouseReel™“
6,13 € 6,13 €
5,96 € 59,60 €
4,69 € 117,25 €
3,69 € 369,00 €
3,14 € 785,00 €
2,82 € 1 410,00 €
2,38 € 2 380,00 €
Visa Ritė (Užsakoma po 2500)
2,29 € 5 725,00 €
† 5,00 € „MouseReel™“ mokestis bus pridėtas ir apskaičiuotas jūsų pirkinių krepšelyje. Visi „MouseReel™“ užsakymai neatšaukiami ir negrąžinami.

Produkto Požymis Atributo vertė Pasirinkite Požymį
Qorvo
Gaminio kategorija: RF Stiprintuvas
RoHS:  
600 MHz to 6 GHz
5 V
56 mA
21.6 dB
0.9 dB
Low Noise Amplifiers
SMD/SMT
DFN-8
Si
19 dBm
35.5 dBm
- 40 C
+ 105 C
QPL9503
Reel
Cut Tape
MouseReel
Prekės Ženklas: Qorvo
Įvesties Grįžtamieji Nuostoliai: 10 dB
Kanalų skaičius: 1 Channel
Gaminio tipas: RF Amplifier
Gamyklinės pakuotės kiekis: 2500
Subkategorija: Wireless & RF Integrated Circuits
Test Dažnis: 5.5 GHz
Dalies Nr., kitokios klasifikacijos numeriai: QPL9503
Vieneto Svoris: 246,638 mg
Rasta produktų:
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Pasirinkti atributai: 0

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TARIC:
8542330000
CNHTS:
8542339000
CAHTS:
8542330000
USHTS:
8542330001
MXHTS:
8542330299
ECCN:
5A991.b

Low Noise Amplifiers

Qorvo Low Noise Amplifiers (LNA) are high-linearity, ultra-low noise, 2-stage gain Block Amplifier Modules. These amplifiers offer an operation bandwidth of 0.45GHz to 3.8GHz. Qorovo LNA modules include bypass mode functionality integrated into the second stage of the module. At 1.95 GHz, the LNAs typically provide 37.5dB gain with an OIP3 of +35dBm in High Gain mode. These amplifiers also provide high performance in the Low Gain mode with 17.5dB gain and an OIP3 of +34dBm.The LNA modules use a high-performance E-pHEMT process. The E-pHEMT technology enables high gain, low noise, and wide dynamic range in high-linearity LNA applications. These amplifiers also contain an internal active bias to maintain high performance over temperature. These low noise amplifiers are packaged in a compact 16-pin 3.5mm x 3.5mm leadless SMT package, which is lead-free, halogen-free, and RoHS compliant.

Small Cell Power Amplifiers

Qorvo Small Cell Power Amplifiers are housed in cost-effective surface-mount packages with on-chip bias control and temperature control circuits. The amplifiers are suitable for small cell or enterprise Femtocell base station applications. These Qorvo devices provide high gain and linear power using an LTE signal over the indicated frequency range.

QPL9503 Low Noise Amplifiers

Qorvo QPL9503 Low Noise Amplifiers (LNA) are flat gain, high linearity, and ultra-low noise amplifiers. These amplifiers typically provide 21.6dB gain at 5.5GHz and optimized for linear performance across 3GHz to the 6GHz frequency band. Qorvo QPL9503 amplifiers are biased from a single positive supply ranging from 3.3V to 5V. These amplifiers are internally matched using a high-performance E-pHEMT process. The LNA operates from 0.6-6GHz bandwidth and is available in a 2mm x 2mm surface-mount package. Features include integrated shut-down control pin, maintains OFF state with high pin drive, and is unconditionally stable. Typical applications include mobile infrastructure, repeaters, L-band, S-band, and C-band radios, and TDD or FDD systems.

LNAs for Sub-6GHz 5G

Qorvo LNAs for Sub-6GHz 5G are a variety of transistors and amplifiers with industry-leading low-noise performance. Qorvo provides multiple product solutions ranging from discrete transistors to packaged MMIC solutions. These solutions incorporate internal matching and on-chip linearization. Dual amplifiers are available for use as push-pull or balanced amplifier configurations. Qorvo LNAs for Sub-6GHz 5G are manufactured using the pHEMT processes with 0.15µm, 0.25µm, or 0.5µm gate lengths.