IXXH50N60C3

IXYS
747-IXXH50N60C3
IXXH50N60C3

Gam.:

Aprašymas:
IGBT XPT IGBT C3-Class 600V/100 Amp

ECAD modelis:
Atsisiųskite nemokamą Library Loader, kad galėtumėte konvertuoti šį failą darbui su ECAD įrankiu. Sužinokite daugiau apie ECAD Modelį.

Prieinamumas

Turime sandėlyje:
Ne Sandėlyje Esantys
Gamintojo numatytas pristatymo laikas
27 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje.
Pranešama apie ilgą šio gaminio pristatymo laiką.
Min. 300   Užsakoma po 30
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Šis Produktas Siunčiamas NEMOKAMAI

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
3,85 € 1 155,00 €

Produkto Požymis Atributo vertė Pasirinkite Požymį
IXYS
Gaminio kategorija: IGBT
RoHS:  
Si
TO-247AD
Through Hole
600 V
2.3 V
- 20 V, 20 V
100 A
600 W
- 55 C
+ 150 C
IXXH50N60
Tube
Prekės Ženklas: IXYS
Užtvaro sklaidos įrenginio nuotėkio srovė: 100 nA
Gaminio tipas: IGBT Transistors
Gamyklinės pakuotės kiekis: 30
Subkategorija: IGBTs
Prekinis pavadinimas: XPT
Vieneto Svoris: 6,500 g
Rasta produktų:
Norėdami rodyti panašius produktus, pažymėkite bent vieną langelį
Pasirinkite bent vieną žymimąjį langelį, kad būtų rodomi panašūs šios kategorijos produktai.
Pasirinkti atributai: 0

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Discrete 600V XPT IGBTs

IXYS Discrete 600V XPT Insulated-Gate Bipolar Transistors (IGBTs) are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values.

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