IDW40G65C5XKSA1

Infineon Technologies
726-IDW40G65C5XKSA1
IDW40G65C5XKSA1

Gam.:

Aprašymas:
SiC SCHOTTKY diodai SIC DIODES

Duomenų Lapas:
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Sužinokite daugiau apie Infineon Technologies IDW40G65C5XKSA1

Prieinamumas: 540

Turime sandėlyje:
540 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
12 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
10,48 € 10,48 €
8,53 € 85,30 €
7,11 € 711,00 €
6,34 € 3 043,20 €
5,38 € 6 456,00 €

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: SiC SCHOTTKY diodai
RoHS:  
Through Hole
TO-247-3
Single
40 A
650 V
1.5 V
182 A
2.2 uA
- 55 C
+ 175 C
XDW40G65
Tube
Prekės Ženklas: Infineon Technologies
Pd - skaidos galia: 183 W
Gaminio tipas: SiC Schottky Diodes
Gamyklinės pakuotės kiekis: 240
Subkategorija: Diodes & Rectifiers
Prekinis pavadinimas: CoolSiC
Vr - atvirkštinė įtampa: 650 V
Dalies Nr., kitokios klasifikacijos numeriai: IDW40G65C5 SP001632890
Vieneto Svoris: 6 g
Rasta produktų:
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Pasirinkti atributai: 0

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TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

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