IDW20G65C5XKSA1

Infineon Technologies
726-IDW20G65C5XKSA1
IDW20G65C5XKSA1

Gam.:

Aprašymas:
SiC SCHOTTKY diodai SIC DIODES

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Prieinamumas: 750

Turime sandėlyje:
750 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
13 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
6,30 € 6,30 €
4,70 € 47,00 €
3,80 € 380,00 €
3,38 € 1 622,40 €
2,89 € 3 468,00 €

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: SiC SCHOTTKY diodai
RoHS:  
Through Hole
TO-247-3
Single
20 A
650 V
1.5 V
103 A
1.1 uA
- 55 C
+ 175 C
XDW20G65
Tube
Prekės Ženklas: Infineon Technologies
Pd - skaidos galia: 112 W
Gaminio tipas: SiC Schottky Diodes
Gamyklinės pakuotės kiekis: 240
Subkategorija: Diodes & Rectifiers
Prekinis pavadinimas: CoolSiC
Vr - atvirkštinė įtampa: 650 V
Dalies Nr., kitokios klasifikacijos numeriai: IDW20G65C5 SP001632900
Vieneto Svoris: 6 g
Rasta produktų:
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Pasirinkti atributai: 0

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TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Switch Mode Power Supplies (SMPS)

Infineon Technologies Switch Mode Power Supplies (SMPS) are a cost-effective line that includes high voltage MOSFETs, control ICs, and Silicon Carbide diodes for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these SMPS products Infineon supports the trends towards continuously reducing power consumption. Especially versatile is the new CoolMOS™ 600V C6 family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For synchronous rectification the OptiMOS™ 3 series offers extremely low on-state resistance and low capacitances. Infineon's new control ICs support topologies such as quasi-resonant flyback and LLC.

Switch Mode Power Supplies - High Power Topology

Infineon Technologies Switch Mode Power Supplies - High Power Topology is suitable for power applications above 400W. Following the front end stage of an AC/DC rectifier, a DC/DC power converter is required to step down the bus voltage and provide a galvanically isolated and tightly regulated DC output (12V, 24V, 48V). While a wide range of isolated topologies are available, the phase-shifted full-bridge converter is more suitable for higher power applications for reasons such as its inherent zero-voltage Switching for the primary side switches.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

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