IDH16G65C5XKSA2

Infineon Technologies
726-IDH16G65C5XKSA2
IDH16G65C5XKSA2

Gam.:

Aprašymas:
SiC SCHOTTKY diodai SIC DIODES

ECAD modelis:
Atsisiųskite nemokamą Library Loader, kad galėtumėte konvertuoti šį failą darbui su ECAD įrankiu. Sužinokite daugiau apie ECAD Modelį.

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: SiC SCHOTTKY diodai
RoHS:  
Through Hole
TO-220-2
Single
16 A
650 V
1.5 V
124 A
850 nA
- 55 C
+ 175 C
650 V
XDH16G65
Tube
Prekės Ženklas: Infineon Technologies
Pd - skaidos galia: 129 W
Gaminio tipas: SiC Schottky Diodes
Gamyklinės pakuotės kiekis: 500
Subkategorija: Diodes & Rectifiers
Prekinis pavadinimas: CoolSiC
Dalies Nr., kitokios klasifikacijos numeriai: IDH16G65C5 SP001632392
Vieneto Svoris: 2 g
Rasta produktų:
Norėdami rodyti panašius produktus, pažymėkite bent vieną langelį
Pasirinkite bent vieną žymimąjį langelį, kad būtų rodomi panašūs šios kategorijos produktai.
Pasirinkti atributai: 0

Kad ši funkcija veiktų, reikia įjungti „JavaScript“.

Reglamentavimo kodai
TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99
Klasifikacija pagal kilmę
Kilmės šalis:
Malaizija
Šalis, kurioje pagaminta:
Malaizija
Distribucijos šalis:
Austrija
Šalis gali keistis siuntimo metu.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

Prieinamumas: 1 495

Turime sandėlyje:
1 495 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
52 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
6,18 € 6,18 €
3,71 € 37,10 €
3,05 € 305,00 €
2,98 € 1 490,00 €
2,67 € 2 670,00 €