FFSP20120A

onsemi
512-FFSP20120A
FFSP20120A

Gam.:

Aprašymas:
SiC SCHOTTKY diodai 1200V 20A Silicon Carbide Schtky Diode

Duomenų Lapas:
ECAD modelis:
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Daugiau informacijos
Sužinokite daugiau apie onsemi FFSP20120A

Prieinamumas: 105

Turime sandėlyje:
105 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
12 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
9,41 € 9,41 €
6,48 € 64,80 €
5,50 € 550,00 €

Produkto Požymis Atributo vertė Pasirinkite Požymį
onsemi
Gaminio kategorija: SiC SCHOTTKY diodai
RoHS:  
Through Hole
TO-220-2
Single
20 A
1.2 kV
1.45 V
135 A
200 uA
- 55 C
+ 175 C
FFSP20120A
Tube
Prekės Ženklas: onsemi
Pd - skaidos galia: 340 W
Gaminio tipas: SiC Schottky Diodes
Gamyklinės pakuotės kiekis: 50
Subkategorija: Diodes & Rectifiers
Prekinis pavadinimas: EliteSiC
Vr - atvirkštinė įtampa: 1.2 kV
Vieneto Svoris: 2,160 g
Rasta produktų:
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Pasirinkti atributai: 0

TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

1200V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 1200V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

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