Analog Devices Inc. ADL8121 GaAs pHEMT MMIC Low Noise Amplifier
Analog Devices Inc. ADL8121 GaAs (Gallium Arsenide) pHEMT (Pseudomorphic High Electron Mobility Transistor) MMIC (Monolithic Microwave Integrated Circuit) Low Noise Amplifier operates from 0.025GHz to 12.0GHz and provides a typical gain of 16.5dB. The ADL8121 Amplifier features a low a 2.5dB typical noise figure and a typical output third-order intercept (OIP3) of 36dBm. The 21.5dBm saturated output power (PSAT) enables the device to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, in-phase and quadrature (I/Q), and image rejection mixers.
The Analog Devices Inc. ADL8121 Low Noise Amplifier is housed in a RoHS-compliant LFCSP-6 package and features inputs and outputs that are internally matched to 50Ω.
Features
- 0.025GHz to 12.0GHz frequency range
- Low 2.5dB (typical) noise figure at 0.025GHz to 10GHz
- Single positive supply (self-biased)
- High 16.5dB (typical) gain at 0.025GHz to 10GHz
- High 36dBm (typical) OIP3 at 0.025GHz to 10GHz
- 21.5dBm (typical) saturated output power (PSAT)
- 5V supply voltage (VDD)
- 95mA supply current (IDQ)
- 1.25W continuous power dissipation (PDISS)
- -40°C to +85°C operating temperature range
- 2.0mm x 2.0mm LFCSP-6 package
- RoHS compliant
Applications
- Test instrumentation
- Military communications
- Telecommunications
- Military radar
Development Tools
Analog Devices Inc. EVAL-ADL8121 Evaluation Board
Demonstration and development platform for the ADL8121 GaAs pHEMT MMIC Low Noise Amplifier.
Typical Application Circuit
Pin Designations
Package Outline
Paskelbta: 2022-05-20
| Atnaujinta: 2022-06-10