TCR8BM30A,L3F
Žr. produkto specifikacijas
Gam.:
Aprašymas:
LDO įtampos reguliatoriai 800mA LDO, Vout=3.0V, Dropout=170mV, Iq=20uA, PSRR=98dB, in DFN5B package
Prieinamumas: 9 594
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Turime sandėlyje:
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9 594 Galime išsiųsti iš kartoĮvyko netikėta klaida. Prašome pabandyti vėliau.
Kainodara (EUR)
| Qty. | Vieneto kaina |
Plėt. Kaina
|
|---|---|---|
| 0,31 € | 0,31 € | |
| 0,212 € | 2,12 € | |
| 0,188 € | 4,70 € | |
| 0,163 € | 16,30 € | |
| 0,151 € | 37,75 € | |
| 0,143 € | 71,50 € | |
| 0,131 € | 131,00 € | |
| Visa Ritė (Užsakoma po 5000) | ||
| 0,126 € | 630,00 € | |
| 0,123 € | 1 230,00 € | |
Duomenų Lapas
Application Notes
- Glossary of CMOS Logic IC Terms
- Impacts of the dv/dt Rate on MOSFETs
- Improving the Load Transient Response of LDOs
- LDO Regulator Application to Power Supplies for High-Frequency Circuits
- LDO Regulator Application to Power Supply Circuits for Digital Cores of CMOS Image Sensors
- LDO Regulator Application to Power Supply Circuits for MCUs
- LDO Regulators Glossary
- Mechanism of LDO Oscillation and Reducing the Susceptibility to Oscillation
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power Efficiency Optimization
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Simple Guide to Improving Ripple Rejection Ratio of LDO Regulators
- Thermal Design to Maximize the Performance of LDO Regulators
- Tips for Selecting Level Shifters (Voltage Translation ICs)
Models
Product Catalogs
- CNHTS:
- 8542399000
- CAHTS:
- 8542390000
- USHTS:
- 8542390090
- MXHTS:
- 8542399999
- ECCN:
- EAR99
Lietuva
