2SA1832-Y,LF
Žr. produkto specifikacijas
Gam.:
Aprašymas:
Dvipoliai tranzistoriai – BJT Transistor for Low Freq Sm-Signal Amp
Prieinamumas: 11 058
-
Turime sandėlyje:
-
11 058 Galime išsiųsti iš kartoĮvyko netikėta klaida. Prašome pabandyti vėliau.
Kainodara (EUR)
| Qty. | Vieneto kaina |
Plėt. Kaina
|
|---|---|---|
| Nukerpama juosta / „MouseReel™“ | ||
| 0,172 € | 0,17 € | |
| 0,103 € | 1,03 € | |
| 0,064 € | 6,40 € | |
| 0,046 € | 23,00 € | |
| 0,041 € | 41,00 € | |
| Visa Ritė (Užsakoma po 3000) | ||
| 0,033 € | 99,00 € | |
| 0,03 € | 270,00 € | |
| 0,023 € | 552,00 € | |
Duomenų Lapas
Application Notes
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors Maximum Ratings
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Product Catalogs
Test/Quality Data
- TARIC:
- 8541210000
- CNHTS:
- 8541210000
- CAHTS:
- 8541210000
- USHTS:
- 8541210095
- JPHTS:
- 8541210101
- KRHTS:
- 8541219000
- MXHTS:
- 85412101
- ECCN:
- EAR99
- Kilmės šalis:
- Tailandas
- Šalis, kurioje pagaminta:
- Ne
- Distribucijos šalis:
- Ne
Lietuva

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2