CSD86350Q5D

Texas Instruments
595-CSD86350Q5D
CSD86350Q5D

Gam.:

Aprašymas:
MOSFETs Synch Buck NexFET Pw r Block MOSFET

ECAD modelis:
Atsisiųskite nemokamą Library Loader, kad galėtumėte konvertuoti šį failą darbui su ECAD įrankiu. Sužinokite daugiau apie ECAD Modelį.

Prieinamumas: 7 323

Turime sandėlyje:
7 323 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
12 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Pakuotė:
Visa Ritė (Užsakoma po 2500)

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
Nukerpama juosta / „MouseReel™“
3,41 € 3,41 €
2,23 € 22,30 €
1,71 € 171,00 €
1,45 € 725,00 €
1,34 € 1 340,00 €
Visa Ritė (Užsakoma po 2500)
1,19 € 2 975,00 €
† 5,00 € „MouseReel™“ mokestis bus pridėtas ir apskaičiuotas jūsų pirkinių krepšelyje. Visi „MouseReel™“ užsakymai neatšaukiami ir negrąžinami.

Alternatyvi pakuotė

Gam. dalies Nr.:
Pakuotė:
Reel, Cut Tape, MouseReel
Prieinamumas:
Prieinamumas
Kaina:
4,09 €
Min.:
1

Produkto Požymis Atributo vertė Pasirinkite Požymį
Texas Instruments
Gaminio kategorija: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SON-8
N-Channel
2 Channel
25 V
40 A
5 mOhms, 1.1 mOhms
- 8 V, 8 V
900 mV
10.7 nC, 25 nC
- 55 C
+ 150 C
13 W
Enhancement
NexFET
Reel
Cut Tape
MouseReel
Prekės Ženklas: Texas Instruments
Configuration: Dual
Kūrimo priemonių rinkinys: CSD86350Q5DEVM-604, TPS53219EVM-690
Rudens laikas: 2.3 ns, 21 ns
Tiesioginis laidumas - min: 103 S, 132 S
Gaminio tipas: MOSFETs
Kilimo Laikas: 21 ns, 23 ns
Serija: CSD86350Q5D
Gamyklinės pakuotės kiekis: 2500
Subkategorija: Transistors
Tipinė išjungimo vėlinimo trukmė: 9 ns, 24 ns
Tipinė įjungimo vėlinimo trukmė: 8 ns, 9 ns
Tranzistoriaus tipas: 2 N-Channel
Vieneto Svoris: 170 mg
Rasta produktų:
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Pasirinkite bent vieną žymimąjį langelį, kad būtų rodomi panašūs šios kategorijos produktai.
Pasirinkti atributai: 0

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFETPower MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.