S29GL064S70TFI030

Infineon Technologies
797-S29GL064S70TFI03
S29GL064S70TFI030

Gam.:

Aprašymas:
NOR Blykstė 64Mb, 3.0V Parallel NOR Blykstė

ECAD modelis:
Atsisiųskite nemokamą Library Loader, kad galėtumėte konvertuoti šį failą darbui su ECAD įrankiu. Sužinokite daugiau apie ECAD Modelį.

Prieinamumas: 1 893

Turime sandėlyje:
1 893 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
16 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
5,56 € 5,56 €
5,17 € 51,70 €
5,01 € 125,25 €
4,90 € 245,00 €
4,78 € 478,00 €
4,63 € 1 157,50 €
4,52 € 2 260,00 €
4,40 € 4 224,00 €
2 880 Pasiūlymas

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: NOR Blykstė
RoHS:  
SMD/SMT
TSOP-48
S29GL064S
64 Mbit
2.7 V
3.6 V
50 mA
Parallel
8 M x 8
8 bit
Asynchronous
- 40 C
+ 85 C
Tray
Prekės Ženklas: Infineon Technologies
Jautrus drėgmei: Yes
Gaminio tipas: NOR Flash
Greitis: 70 ns
Gamyklinės pakuotės kiekis: 960
Subkategorija: Memory & Data Storage
Prekinis pavadinimas: MirrorBit
Vieneto Svoris: 506,696 mg
Rasta produktų:
Norėdami rodyti panašius produktus, pažymėkite bent vieną langelį
Pasirinkite bent vieną žymimąjį langelį, kad būtų rodomi panašūs šios kategorijos produktai.
Pasirinkti atributai: 0

Reglamentavimo kodai
TARIC:
8542326100
CNHTS:
8542329090
USHTS:
8542320071
JPHTS:
854232031
KRHTS:
8542321090
MXHTS:
8542320201
ECCN:
3A991.b.1.a
Klasifikacija pagal kilmę
Kilmės šalis:
Jungtinės Valstijos
Šalis, kurioje pagaminta:
Tailandas
Distribucijos šalis:
Jungtinės Valstijos
Šalis gali keistis siuntimo metu.

S29GL064S Flash Memory

Infineon Technologies S29GL064S Flash Memory family of devices are 3V single power supply flash memory, manufactured on 65nm MIRRORBIT™ process technology. These devices are 16bit wide data and also function as an 8bit wide data bus by using the BYTE# input. The memory devices are entirely command set compatible with the JEDEC single-power-supply flash standard. Infineon MIRRORBIT Flash technology produces the highest levels of quality, reliability and cost effectiveness. Features include low power consumption, high-performance of 70ns access time, and CMOS 3V core with versatile I/O.

NOR JL Flash Memory Devices

Infineon Technologies expanded its line of NOR JL Flash Memory Devices family to include densities of 32Mb and 64Mb. Each of these NOR JL Flash Memory Devices require only a single 3V power supply for reading and writing functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress NOR JL Flash Memory Devices family is capable of performing simultaneous read and write operations with zero latency on two or four separate banks and features x8 and x16 data buses. The Infineon NOR JL family Flash memory device delivers simultaneous read/write operation with densities of 32Mb and 64Mb. The NOR JL device features parallel NOR Flash memory, 55ns - 60ns access, simultaneous read/write, page-mode interface, and boot sector architecture. This Infineon device offers package options of BGA and TSOP.

S29GL01G/512/256/128S MIRRORBIT™ Flash Memory

Infineon Technologies S29GL01G/512/256/128S MIRRORBIT™ Eclipse Flash Memory is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MIRRORBIT Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set is compatible with the JEDEC Flash standards. The MIRRORBIT GL Flash Memory Device family supports Universal Footprint, which provides one footprint across all densities. The flash memory also supports product families and process technologies. This allows manufacturers to design single platform and simple scale Flash memory capacity up or down, depending on features and functionality.