S25FL128SAGNFM003

Infineon Technologies
727-S25FL128SANFM003
S25FL128SAGNFM003

Gam.:

Aprašymas:
NOR Blykstė IC 128 Mb FLASHMEM

Duomenų Lapas:
ECAD modelis:
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Daugiau informacijos
Sužinokite daugiau apie Infineon Technologies S25FL128SAGNFM003

Prieinamumas: 976

Turime sandėlyje:
976 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
16 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Pakuotė:
Visa Ritė (Užsakoma po 2500)

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
Nukerpama juosta / „MouseReel™“ †
4,43 € 4,43 €
4,13 € 41,30 €
4,01 € 100,25 €
3,91 € 195,50 €
3,82 € 382,00 €
3,70 € 925,00 €
3,60 € 1 800,00 €
3,52 € 3 520,00 €
Visa Ritė (Užsakoma po 2500)
3,23 € 8 075,00 €
† 5,00 € „MouseReel™“ mokestis bus pridėtas ir apskaičiuotas jūsų pirkinių krepšelyje. Visi „MouseReel™“ užsakymai neatšaukiami ir negrąžinami. ↩

Alternatyvi pakuotė

Gam. dalies Nr.:
S25FL128SAGNFM000
Pakuotė:
Tray
Prieinamumas:
Prieinamumas
Kaina:
4,43 €
Min.:
1

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: NOR Blykstė
RoHS:  
SMD/SMT
WSON-8
S25FL128S
128 Mbit
2.7 V
3.6 V
100 mA
SPI
133 MHz
16 M x 8
8 bit
Synchronous
- 40 C
+ 125 C
AEC-Q100
Reel
Cut Tape
MouseReel
Prekės Ženklas: Infineon Technologies
Gamybos šalis: Not Available
Distribucijos šalis: Not Available
Kilmės šalis: US
Jautrus drėgmei: Yes
Gaminio tipas: NOR Flash
Greitis: 133 MHz
Gamyklinės pakuotės kiekis: 2500
Subkategorija: Memory & Data Storage
Prekinis pavadinimas: MirrorBit
Vieneto Svoris: 8,311 g
Rasta produktų:
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Pasirinkti atributai: 0

Duomenų Lapas

TARIC:
8542326100
CNHTS:
8542329090
CAHTS:
8542320040
USHTS:
8542320051
MXHTS:
8542320299
ECCN:
3A991.b.1.a

Automotive Solutions

Infineon Technologies Automotive Solutions are an AEC-Q100 qualified portfolio that consists of high-quality products with a strict zero-defect policy in manufacturing and testing. MCU, NOR, RAM, and PMIC parts ensure quality and support for cluster, body electronics, HMI, and high-performance storage solutions.

S25FL128S NOR Flash Memory Devices

Infineon Technologies S25FL128S FL-S NOR Flash Memory Devices are a 2.7V to 3.6V / 1.65V to 3.6V VIO Volt non-volatile memory using 65nm MIRRORBIT™ technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single-bit serial input and output (Single I/O or SIO), optional two-bit (Dual I/O or DIO), and four-bit (Quad I/O or QIO) serial commands. 

S25FL MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25FL128S/S25FL256S MIRRORBIT™ Flash Non-Volatile Memory devices employ MIRRORBIT technology that stores two data bits in each memory array transistor. These Infineon devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. Infineon S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25 MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25 MIRRORBIT™ Flash Non-Volatile Memory uses MIRRORBIT technology, which stores two data bits in each memory array transistor; Eclipse architecture dramatically improves program and erase performance; and 65nm process lithography. This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Infineon S25 MIRRORBIT Flash Non-Volatile Memory is ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices

Infineon Technologies S25FLxS FL-S NOR Flash Memory Devices are 2.7V to 3.6V or 1.65V to 3.6V VIO Volt Non-volatile Memory. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MIRRORBIT™ technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in more effective programming and erasing than prior generation SPI programs or erased algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.

FL Serial NOR Flash Memory

Infineon Technologies FL Serial NOR Flash Memory offers a reduced pin count while providing optimal read/write performance. This feature makes the FL Serial NOR Flash Memory optimal for automotive, networking, consumer electronics, and industrial applications. An AEC-Q100 qualification and PPAP support are available for automotive customers. The Infineon FL family has four product groups: FL-S, FL-L, FL1-K, and FL-P.

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