IPL60R065P7AUMA1

Infineon Technologies
726-IPL60R065P7AUMA1
IPL60R065P7AUMA1

Gam.:

Aprašymas:
MOSFETs HIGH POWER_NEW

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Sužinokite daugiau apie Infineon Technologies IPL60R065P7AUMA1

Prieinamumas: 267

Turime sandėlyje:
267
Galime išsiųsti iš karto
Pagal užsakymą:
3 000
Tikėtina 2026-09-17
Gamintojo numatytas pristatymo laikas
52
Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Pranešama apie ilgą šio gaminio pristatymo laiką.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Pakuotė:
Visa Ritė (Užsakoma po 3000)

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
Nukerpama juosta / „MouseReel™“ †
5,33 € 5,33 €
3,69 € 36,90 €
2,85 € 285,00 €
2,66 € 1 330,00 €
2,43 € 2 430,00 €
Visa Ritė (Užsakoma po 3000)
2,40 € 7 200,00 €
† 5,00 € „MouseReel™“ mokestis bus pridėtas ir apskaičiuotas jūsų pirkinių krepšelyje. Visi „MouseReel™“ užsakymai neatšaukiami ir negrąžinami. ↩

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
VSON-4
N-Channel
1 Channel
600 V
41 A
53 mOhms
- 20 V, 20 V
3 V
67 nC
- 40 C
+ 150 C
201 W
Enhancement
CoolMOS
Reel
Cut Tape
MouseReel
Prekės Ženklas: Infineon Technologies
Configuration: Single
Gamybos šalis: Not Available
Distribucijos šalis: Not Available
Kilmės šalis: DE
Rudens laikas: 4 ns
Jautrus drėgmei: Yes
Gaminio tipas: MOSFETs
Kilimo Laikas: 7 ns
Serija: CoolMOS P7
Gamyklinės pakuotės kiekis: 3000
Subkategorija: Transistors
Tipinė išjungimo vėlinimo trukmė: 73 ns
Tipinė įjungimo vėlinimo trukmė: 16 ns
Tranzistoriaus tipas: 1 N-Channel
Dalies Nr., kitokios klasifikacijos numeriai: IPL60R065P7 SP001657396
Vieneto Svoris: 187,650 mg
Rasta produktų:
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Pasirinkti atributai: 0

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
MXHTS:
85412999
ECCN:
EAR99

600V CoolMOS™ P7 MOSFETs

Infineon 600V CoolMOS™ P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

CoolMOS™ 7 Superjunction MOSFETs

Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs are optimized for energy efficiency, power density, and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, adapters and chargers can be made smaller, lighter, and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ P7 MOSFETs

Infineon Technologies CoolMOS™ P7 MOSFETs deliver a best-in-class price/performance ratio with excellent ease of use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications, including adapters and chargers, lighting, audio SMPS, AUX, and industrial power. The 600V CoolMOS P7 power MOSFETs target low-power and high-power SMPS applications like solar inverters, servers, telecom, and EV charging stations. Infineon P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

USB-C Chargers & Adapters

Infineon Technologies offers tailor-made semiconductors that consider customers’ priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C™ source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery, and ESD protection devices.

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