1EDI20I12AFXUMA1

Infineon Technologies
726-1EDI20I12AFXUMA1
1EDI20I12AFXUMA1

Gam.:

Aprašymas:
Gate Tvarkyklės 1200V Isolated 1-CH, 3.5A,Separate Outpu

ECAD modelis:
Atsisiųskite nemokamą Library Loader, kad galėtumėte konvertuoti šį failą darbui su ECAD įrankiu. Sužinokite daugiau apie ECAD Modelį.

Prieinamumas: 2 827

Turime sandėlyje:
2 827 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
52 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Pakuotė:
Visa Ritė (Užsakoma po 2500)

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
Nukerpama juosta / „MouseReel™“
1,35 € 1,35 €
0,989 € 9,89 €
0,894 € 22,35 €
0,794 € 79,40 €
0,746 € 186,50 €
0,718 € 359,00 €
0,695 € 695,00 €
Visa Ritė (Užsakoma po 2500)
0,624 € 1 560,00 €
† 5,00 € „MouseReel™“ mokestis bus pridėtas ir apskaičiuotas jūsų pirkinių krepšelyje. Visi „MouseReel™“ užsakymai neatšaukiami ir negrąžinami.

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: Gate Tvarkyklės
RoHS:  
IGBT, MOSFET Gate Drivers
High-Side
SMD/SMT
SOIC-8
1 Driver
1 Output
2 A
3.1 V
17 V
Inverting, Non-Inverting
10 ns
9 ns
- 40 C
+ 150 C
1ED Compact
Reel
Cut Tape
MouseReel
Prekės Ženklas: Infineon Technologies
Gamybos šalis: Not Available
Distribucijos šalis: Not Available
Kilmės šalis: DE
Loginis Type: CMOS
Jautrus drėgmei: Yes
Pd - skaidos galia: 400 mW
Gaminio tipas: Gate Drivers
Vėlinimo trukmė – maks.: 330 ns
Išjungimas: Shutdown
Gamyklinės pakuotės kiekis: 2500
Subkategorija: PMIC - Power Management ICs
Technologijos: Si
Prekinis pavadinimas: EiceDRIVER
Dalies Nr., kitokios klasifikacijos numeriai: 1EDI20I12AF SP001037228
Vieneto Svoris: 1,620 g
Rasta produktų:
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Pasirinkti atributai: 0

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TARIC:
8542399000
CNHTS:
8542399000
USHTS:
8542310075
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

1-Channel EiceDRIVER™ MOSFET Gate Driver ICs

Infineon Technologies 1-Channel EiceDRIVER™ MOSFET Gate Driver ICs are the crucial link between control ICs, powerful MOSFET, and GaN switching devices. These gate driver ICs enable high system-level efficiencies, excellent power density, and consistent system robustness.

Isolated Gate Drivers

Infineon Isolated Gate Drivers use magnetically coupled coreless transformer (CT) technology to transfer signals across galvanic isolation. These drivers offer functional basic, reinforced isolated, UL 1577, and VDE 0884 certified products. The isolation allows for very large voltage swings (e.g. ±1200V). These isolated drivers incorporate the most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET, and GaN HEMT driving.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.