IXSH65N120L2KHV

IXYS
747-IXSH65N120L2KHV
IXSH65N120L2KHV

Gam.:

Aprašymas:
SiC MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L

Eksploatacijos Laikotarpis:
Naujas Produktas:
Naujiena iš šio gamintojo.
ECAD modelis:
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Prieinamumas: 537

Turime sandėlyje:
537 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
27 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
10,57 € 10,57 €
7,53 € 75,30 €
5,58 € 558,00 €
Visa Ritė (Užsakoma po 450)
5,47 € 2 461,50 €
5,29 € 4 761,00 €

Produkto Požymis Atributo vertė Pasirinkite Požymį
IXYS
Gaminio kategorija: SiC MOSFET
RoHS:  
Through Hole
TO-247-4L
N-Channel
1 Channel
1.2 kV
65 A
52 mOhms
- 5 V, + 20 V
4.5 V
110 nC
- 55 C
+ 175 C
375 W
Enhancement
Prekės Ženklas: IXYS
Configuration: Single
Rudens laikas: 10.5 ns
Pakavimas: Reel
Pakavimas: Cut Tape
Gaminys: MOSFETs
Gaminio tipas: SiC MOSFETS
Kilimo Laikas: 22.1 ns
Gamyklinės pakuotės kiekis: 450
Subkategorija: Transistors
Technologijos: SiC
Tipinė išjungimo vėlinimo trukmė: 19.3 ns
Tipinė įjungimo vėlinimo trukmė: 9.6 ns
Tranzistoriaus tipas: 1 N-Channel
Rasta produktų:
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Pasirinkti atributai: 0

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Reglamentavimo kodai
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Klasifikacija pagal kilmę
Kilmės šalis:
Kinija
Šalis, kurioje pagaminta:
Ne
Distribucijos šalis:
Ne
Šalis gali keistis siuntimo metu.

Commercial & Tactical UAV Systems

Littelfuse Commercial and Tactical Unmanned Aerial Vehicle (UAV) Systems offer solutions for Li-Ion battery protection, battery chargers, and power distribution. These systems provide fuses for input protection/overcurrent protection, MOSFETs for semiconductor switching, and TVS diodes for DC output transient/surge protection. The commercial and tactical UAV systems offer battery protection >60V and provide main-pack fault isolation, battery disconnect/power path control (pre-charge support), and branch circuit overcurrent protection. Typical applications include Intelligence, Surveillance, and Reconnaissance (ISR), military, border surveillance, agriculture, delivery/logistics, inspection, and public safety.

Fuel-Powered/Hybrid Military UAV Systems

Littelfuse Fuel-Powered/Hybrid Military Unmanned Aerial Vehicle (UAV) Systems offer solutions for power conversion and DC bus, power distribution, and charger/ground power. These systems support power conversion and a DC bus with a rectifier diode that converts AC line voltage to DC. The fuel-powered/hybrid military Unmanned Aerial Vehicle (UAV) systems provide TVS diodes, fuses, and MOSFETs for semiconductor switches, surge protection, and rectification. These systems offer AEC-Q/MIL-grade products across various functions. Typical applications include Intelligence, Surveillance, and Reconnaissance (ISR), military, and border surveillance.

Drone Subsystems

Littelfuse Drone Subsystems offer solutions for USB-C PD and Li-ion battery chargers, battery pack systems, and BLDC motors. These subsystems offer fuses for various functions, including AC input overcurrent protection and fault isolation, protection of the battery and downstream controller, pack, wiring, and controller. The drone subsystems provide TVS diodes for primary-side switching transient suppression and cell monitor IC sense line input overvoltage protection. These subsystems are appropriate for various drones, including toy, camera, First-Person View (FPV), enterprise, industrial, Intelligence, Surveillance, and Reconnaissance (ISR), inspection/mapping, agriculture, and heavy lift. Typical applications include delivery/logistics, public safety, border surveillance, and military.

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).