IXFN150N65X2

IXYS
747-IXFN150N65X2
IXFN150N65X2

Gam.:

Aprašymas:
MOSFET moduliai 650V/145A Ultra Junction X2-Class

ECAD modelis:
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Prieinamumas: 5

Turime sandėlyje:
5
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Pagal užsakymą:
256
Tikėtina 2026-04-10
300
Tikėtina 2026-04-17
Gamintojo numatytas pristatymo laikas
41
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Vieneto kaina:
-,-- €
Plėt. Kaina:
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Numatomas Įkainis:
Šis Produktas Siunčiamas NEMOKAMAI

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
50,68 € 50,68 €
40,07 € 400,70 €

Produkto Požymis Atributo vertė Pasirinkite Požymį
IXYS
Gaminio kategorija: MOSFET moduliai
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
650 V
145 A
17 mOhms
- 30 V, + 30 V
5 V
- 55 C
+ 150 C
1.04 mW
650V Ultra Junction X2
Tube
Prekės Ženklas: IXYS
Configuration: Single
Rudens laikas: 13 ns
Gaminio tipas: MOSFET Modules
Kilimo Laikas: 30 ns
Gamyklinės pakuotės kiekis: 10
Subkategorija: Discrete and Power Modules
Tipas: HiperFET
Tipinė išjungimo vėlinimo trukmė: 100 ns
Tipinė įjungimo vėlinimo trukmė: 55 ns
Prekinis pavadinimas: HiPerFET
Vr - atvirkštinė įtampa: 100 V
Vieneto Svoris: 30 g
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Pasirinkti atributai: 0

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

Supercharged Solutions for EV Charging Systems

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X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

Electrical Vehicle DC Fast Chargers

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Ultra Junction MOSFETs

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