IXFK64N60Q3

IXYS
747-IXFK64N60Q3
IXFK64N60Q3

Gam.:

Aprašymas:
MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/64A

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Prieinamumas

Turime sandėlyje:
Ne Sandėlyje Esantys
Gamintojo numatytas pristatymo laikas
46 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje.
Pranešama apie ilgą šio gaminio pristatymo laiką.
Min. 300   Užsakoma po 25
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Šis Produktas Siunčiamas NEMOKAMAI

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
24,91 € 7 473,00 €

Produkto Požymis Atributo vertė Pasirinkite Požymį
IXYS
Gaminio kategorija: MOSFETs
RoHS:  
Si
Through Hole
TO-264-3
N-Channel
1 Channel
600 V
64 A
95 mOhms
- 30 V, 30 V
190 nC
1.25 kW
HiPerFET
Tube
Prekės Ženklas: IXYS
Configuration: Single
Gamybos šalis: Not Available
Distribucijos šalis: Not Available
Kilmės šalis: PH
Gaminio tipas: MOSFETs
Kilimo Laikas: 300 ns
Serija: IXFK64N60
Gamyklinės pakuotės kiekis: 25
Subkategorija: Transistors
Tranzistoriaus tipas: 1 N-Channel
Vieneto Svoris: 10 g
Rasta produktų:
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Pasirinkti atributai: 0

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TARIC:
8541500000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85415001
ECCN:
EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Q3-Class HiperFET™ Power MOSFETs

IXYS Q3-Class HiperFET™ Power MOSFETs provide the end-user with a broad range of devices with exceptional power-switching performance. They also offer excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. These MOSFETs come with drain-to-source voltage ratings of 200V to 1000V and drain current ratings of 10A to 100A. These features make the Q3-Class an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), substantially reducing the device's conduction and switching loss. Power switching capabilities and device ruggedness are further enhanced by utilizing the HiperFET process. This process yields a device with a fast intrinsic rectifier, which provides for a low reverse recovery charge (Qrr) while enhancing the device's commutating dv/dt ratings (up to 50V/ns).

HiPerFET Power MOSFETs

IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all .

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