IXFH70N20Q3

IXYS
747-IXFH70N20Q3
IXFH70N20Q3

Gam.:

Aprašymas:
MOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A

Duomenų Lapas:
ECAD modelis:
Atsisiųskite nemokamą Library Loader, kad galėtumėte konvertuoti šį failą darbui su ECAD įrankiu. Sužinokite daugiau apie ECAD Modelį.
Daugiau informacijos
Sužinokite daugiau apie IXYS IXFH70N20Q3

Prieinamumas

Turime sandėlyje:
0

Taip pat galite pirkti šį produktą kaip sandėlyje neesančią prekę.

Gamintojo numatytas pristatymo laikas
39 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje.
Pranešama apie ilgą šio gaminio pristatymo laiką.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
16,47 € 16,47 €
12,55 € 125,50 €
9,19 € 1 102,80 €

Produkto Požymis Atributo vertė Pasirinkite Požymį
IXYS
Gaminio kategorija: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
200 V
70 A
40 mOhms
- 30 V, 30 V
3.5 V
67 nC
- 55 C
+ 150 C
690 W
Enhancement
HiPerFET
Tube
Prekės Ženklas: IXYS
Configuration: Single
Rudens laikas: 9 ns
Tiesioginis laidumas - min: 32 S
Gaminio tipas: MOSFETs
Kilimo Laikas: 10 ns
Serija: IXFH70N20
Gamyklinės pakuotės kiekis: 30
Subkategorija: Transistors
Tipinė išjungimo vėlinimo trukmė: 24 ns
Tipinė įjungimo vėlinimo trukmė: 17 ns
Tranzistoriaus tipas: 1 N-Channel
Vieneto Svoris: 6 g
Rasta produktų:
Norėdami rodyti panašius produktus, pažymėkite bent vieną langelį
Pasirinkite bent vieną žymimąjį langelį, kad būtų rodomi panašūs šios kategorijos produktai.
Pasirinkti atributai: 0

Duomenų Lapas

PCN

Kad ši funkcija veiktų, reikia įjungti „JavaScript“.

Reglamentavimo kodai
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Klasifikacija pagal kilmę
Kilmės šalis:
Pietų Korėja
Šalis, kurioje pagaminta:
Ne
Distribucijos šalis:
Ne
Šalis gali keistis siuntimo metu.

Commercial & Tactical UAV Systems

Littelfuse Commercial and Tactical Unmanned Aerial Vehicle (UAV) Systems offer solutions for Li-Ion battery protection, battery chargers, and power distribution. These systems provide fuses for input protection/overcurrent protection, MOSFETs for semiconductor switching, and TVS diodes for DC output transient/surge protection. The commercial and tactical UAV systems offer battery protection >60V and provide main-pack fault isolation, battery disconnect/power path control (pre-charge support), and branch circuit overcurrent protection. Typical applications include Intelligence, Surveillance, and Reconnaissance (ISR), military, border surveillance, agriculture, delivery/logistics, inspection, and public safety.

Fuel-Powered/Hybrid Military UAV Systems

Littelfuse Fuel-Powered/Hybrid Military Unmanned Aerial Vehicle (UAV) Systems offer solutions for power conversion and DC bus, power distribution, and charger/ground power. These systems support power conversion and a DC bus with a rectifier diode that converts AC line voltage to DC. The fuel-powered/hybrid military Unmanned Aerial Vehicle (UAV) systems provide TVS diodes, fuses, and MOSFETs for semiconductor switches, surge protection, and rectification. These systems offer AEC-Q/MIL-grade products across various functions. Typical applications include Intelligence, Surveillance, and Reconnaissance (ISR), military, and border surveillance.

Drone Subsystems

Littelfuse Drone Subsystems offer solutions for USB-C PD and Li-ion battery chargers, battery pack systems, and BLDC motors. These subsystems offer fuses for various functions, including AC input overcurrent protection and fault isolation, protection of the battery and downstream controller, pack, wiring, and controller. The drone subsystems provide TVS diodes for primary-side switching transient suppression and cell monitor IC sense line input overvoltage protection. These subsystems are appropriate for various drones, including toy, camera, First-Person View (FPV), enterprise, industrial, Intelligence, Surveillance, and Reconnaissance (ISR), inspection/mapping, agriculture, and heavy lift. Typical applications include delivery/logistics, public safety, border surveillance, and military.

HiPerFET Power MOSFETs

IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all .

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Q3-Class HiperFET™ Power MOSFETs

IXYS Q3-Class HiperFET™ Power MOSFETs provide the end-user with a broad range of devices with exceptional power-switching performance. They also offer excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. These MOSFETs come with drain-to-source voltage ratings of 200V to 1000V and drain current ratings of 10A to 100A. These features make the Q3-Class an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), substantially reducing the device's conduction and switching loss. Power switching capabilities and device ruggedness are further enhanced by utilizing the HiperFET process. This process yields a device with a fast intrinsic rectifier, which provides for a low reverse recovery charge (Qrr) while enhancing the device's commutating dv/dt ratings (up to 50V/ns).

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Įvyko netikėta klaida.


Turite klausimų? Apsilankykite pagalbos centre.
Jei turite klausimų apie konkretų užsakymą, prisijunkite prie savo paskyros.

Jei susidūrėte su papildomomis problemomis, susisiekite su mumis tel. Nr. 800-346-6873 arba el. paštu help@mouser.com.